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Real time dose monitoring system by sensing implanter current and biased pulse voltage in plasma source ion implantation

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dc.contributor.author정진욱-
dc.date.accessioned2021-08-03T17:19:02Z-
dc.date.available2021-08-03T17:19:02Z-
dc.date.created2021-06-30-
dc.date.issued2011-07-06-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/54799-
dc.publisherchinese vacuum society-
dc.titleReal time dose monitoring system by sensing implanter current and biased pulse voltage in plasma source ion implantation-
dc.typeConference-
dc.contributor.affiliatedAuthor정진욱-
dc.identifier.bibliographicCitationthe third international conference on microelectronics and plasma technology-
dc.relation.isPartOfthe third international conference on microelectronics and plasma technology-
dc.citation.titlethe third international conference on microelectronics and plasma technology-
dc.citation.conferencePlacedalian, china-
dc.type.rimsCONF-
dc.description.journalClass1-
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서울 공과대학 > 서울 전기공학전공 > 2. Conference Papers

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