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Interface characteristics with in-situ water vapor treatment of Ge substrate and HfO2 dielectric growth with atomic layer decomposition
- Authors
- 안진호
- Issue Date
- 20101111
- Place
- Japan
- Conference Name
- MNC2010(2010 International Microprocesses and Nanotechnology Confeerence)
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)