Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Property of interfacial layer induced VFB shift in Al-related gate oxide deposited by remote plasma atomic layer deposition
- Authors
- 전형탁
- Issue Date
- 20101019
- Place
- NEW MEXICO, UNITED STATES OF AMERICA
- Conference Name
- AVS 57th international symposium & exhibition
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)