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Effect fo the interface carrier density on the device property fo the ZnO thin film transistor fabricated by Atomic Layer Deposition method

Authors
전형탁
Issue Date
20090608
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/61534
Place
congress center strasbourg, France
Conference Name
E-MRS 2009 Spring Meeting
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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Jeon, Hyeongtag
COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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