Physical properties of Co2MnSi for the material of Si-based spin transistors

Abstract

Ferromagnetic films of Co2MnSi on SOI wafers with a 40 nm-thick Si layer were prepared using the silicidation technique, which is a compatible process with CMOS (Complementary Metal-Oxide-Semiconductor) fabrication technology involving a deposition of Co-Mn metallic multilayers on a Si layer prior to the rapid thermal annealing process at 650 ℃ for 3 minutes. Physical properties as well as microscopic structures were investigated for the possible applications to Si-based spin transistors, i.e., Das-Datta SFETs (Spin Field-Effect Transistor). High saturated magnetization amounting to 1.6 μB/Co-atom was observed and strong correlations between the magnetic and transport properties were found.