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Resistive switching characteristics of HfO2 film grown by atomic layer deposition technique
- Authors
- 안진호
- Issue Date
- 24-Jul-2006
- Place
- Korea, Seoul
- Conference Name
- AVS 6th International Conference on Atomic Layer Deposition
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)