Statistical Models for Hot Electron Degradation in Nanoscaled MOSFET Devices

Abstract

In a metal-oxide-semiconductor (MOS) structure, hot carrier interface state generation (HCI) is a critical feature of the item`s lifetime measurement. Understanding of physical mechanisms of hot carrier injection will provide meaningful clues for backtracking from observed macro-defects to inferred nano-defects scattered inside the MOSFET devices. We investigate physical models of the defects (hot carriers) generation leading to failure based on statistical properties for MOSFETs.