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Resistive Switching Characteristies of HfO2 Deposited by Atomic Layer Deposition
- Authors
- 안진호
- Issue Date
- 12-Feb-2006
- Place
- 무주리조트
- Conference Name
- 제15회 유전체물성심포지움
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)