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Electrical Characterization of Al2O3/ HfO2 Gate Oxide about the Various Thickness of Al2O3 Deposited by Atomic Layer Deposition
- Authors
- 전형탁
- Issue Date
- 29-Mar-2005
- Place
- San Francisco
- Conference Name
- 2005 MRS Spring Meeting
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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