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The Dependency of Strained Si Inversion Layer Grown on SiGe-On-Insulator n-MOS FETs on Phonon-Limited Mobility
- Authors
- 박재근
- Issue Date
- 25-Feb-2005
- Place
- Korea Seoul Coex
- Conference Name
- 한국반도체학술대회
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Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
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