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Thin Gate Oxides Prepared by Hydrogen-Assisted Low Pressure Radical Oxidation for DRAM Devices Designated to 300mm Wafers Mass Production
- Authors
- 안진호
- Issue Date
- 20050224
- Place
- 코엑스
- Conference Name
- 제12회 한국반도체학술대회
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)