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The effects of nitrogen and silicon profile on high-k MOSFET performance and Bias Temperature Instability

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dc.contributor.author최창환-
dc.date.accessioned2021-08-04T05:52:59Z-
dc.date.available2021-08-04T05:52:59Z-
dc.date.created2021-06-30-
dc.date.issued2004-06-17-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/74397-
dc.publisherIEEE-
dc.titleThe effects of nitrogen and silicon profile on high-k MOSFET performance and Bias Temperature Instability-
dc.typeConference-
dc.contributor.affiliatedAuthor최창환-
dc.identifier.bibliographicCitationSymposium on VLSI Technology (VLSI)-
dc.relation.isPartOfSymposium on VLSI Technology (VLSI)-
dc.citation.titleSymposium on VLSI Technology (VLSI)-
dc.citation.conferencePlaceHonolulu, USA-
dc.type.rimsCONF-
dc.description.journalClass1-
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