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Effects of Al2O3 layer thickness in Al2O3/HfO2 gate oxide deposited by Atomic Layer Deposition Method
- Authors
- 전형탁
- Issue Date
- 20040413
- Place
- San Francisco,CA. USA
- Conference Name
- 2004 MRS Spring Meeting
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Jeon, Hyeongtag
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)