Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Effect of temperature, GeH4 gas pre-flow, gas ratio on formation of SiGe layer for strained Si
- Authors
- 박재근
- Issue Date
- 21-Nov-2003
- Place
- 연세대학교(KOREA)
- Conference Name
- 03년도 한국재료학회 추계학술대회 및 제1회 화합물반도체 심포지엄 논문개요집
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 2. Conference Papers
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.