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Impurity free vacancy disordering of self-assembled InGaAs quantum dots by using PECVD-grown SiO2 and SiNx capping films

Authors
김은규
Issue Date
3-Oct-2002
Publisher
University of Tokyo
Citation
2nd Inter. Conf. on Semiconductor Quantum Dots (QD2002)
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/77729
Conference Name
2nd Inter. Conf. on Semiconductor Quantum Dots (QD2002)
Place
Univ. of Tokyo, Japan
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서울 자연과학대학 > 서울 물리학과 > 2. Conference Papers

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