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Properties of HfO2 gate dielectrics prepared by atomic layer depositon using HfCl4/H2O precursors
- Authors
- 안진호
- Issue Date
- 20020801
- Place
- 서울
- Conference Name
- AVS Topical Conference on ALD
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)