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Improving Write Performance Through Reliable Asynchronous Operation in Physically-Addressable SSDopen access

Authors
Lee, DaeyongKwak, JaewookLee, GyeongyongJang, MoonseokJeong, JoonyongWang, KexinChoi, JungwookSong, Yong Ho
Issue Date
Oct-2020
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Keywords
Reliability; Memory management; Time factors; Degradation; Writing; Flash memories; Delays; Flash translation layer; NAND flash memory; open-channel SSD; physically-addressable SSD; solid-state drive
Citation
IEEE ACCESS, v.8, pp.195528 - 195540
Indexed
SCIE
SCOPUS
Journal Title
IEEE ACCESS
Volume
8
Start Page
195528
End Page
195540
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/7921
DOI
10.1109/ACCESS.2020.3033886
Abstract
Physically-addressable solid-state drives (PASSDs) are secondary storage devices that provide a physical address-based interface for a host system to directly control NAND flash memory. PASSDs overcome the shortcomings such as latency variability, resource under-utilization, and log-on-log that are associated with legacy SSDs. However, in some operating environments, the write response time significantly increases because the PASSD reports the completion of a host write command synchronously (i.e., write-through) owing to reliability problems. It contrasts asynchronous processing (i.e., write-back), which reports a completion immediately after data are received in a high-performance volatile memory subsequently used as a write buffer to conceal the operation time of NAND flash memory. Herein, we propose a new scheme that guarantees write reliability to enable a reliable asynchronous write operation in PASSD. It is designed to use a large-granularity mapping table for minimizing the memory requirements and performing internal operations at an idle time to avoid response delays. Results demonstrate that the proposed PASSD reduces the average write response time by up to 88% and guarantees reliability without performance degradation.
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서울 공과대학 (서울 융합전자공학부)
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