Triode type carbon nanotube field emitter arrays directly grown into the holes formed on Si substrate

Abstract

The availability of carbon nanotubes by chemical vapor deposition using catalytic metals has provided a possibility as a cheap and a large area deposition process. One of the most interesting electronic applications of carbon nanotubes is the field electron emitter. In this case a direct growth on the predefined three-dimensional structure us required. Since any post-purification process after forming gated triode structure may result in not only the mechanical damages on the structure but also serious damages on the surface of nanotubes which act as another electron scattering centers, the as-grown carbon nanotubes are used without any post-purifying treatment. Here, we present fabrication of the world-first carbon nanotubes field emission picture element with gate electrodes and their basic field emission properties. Though the characteristics indicate that there are still a few technical problems to be solved, a gated triode structure with carbon nanotubes directly grown on the substrate as an emitter is a very promising candidate for the next-generation field displays.