Memory Characteristics of Capacitors with Poly-GaP Floating Gatesopen access
- Authors
- Shin, Sang Hoon; Oh, Young Taek; Song, Jin Dong; Song, Yun Heub
- Issue Date
- Nov-2020
- Publisher
- KOREAN VACUUM SOC
- Keywords
- III-V floating gate; III-V memory; Memory window; Molecular beam epitaxy; Polycrytalline gallium phosphide
- Citation
- APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, v.29, no.6, pp.183 - 185
- Indexed
- SCOPUS
KCI
- Journal Title
- APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY
- Volume
- 29
- Number
- 6
- Start Page
- 183
- End Page
- 185
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/8839
- DOI
- 10.5757/ASCT.2020.29.6.183
- ISSN
- 1225-8822
- Abstract
- We fabricated a capacitor with polycrystalline gallium phosphide (Poly-GaP), which has high thermal immunity for better CMOS compactness, as a floating gate. Using a phosphide beam flux, in a molecular beam epitaxy chamber, 0.5 mu m of Poly-GaP film was successfully grown on silicon at 250 degrees C. Its device characteristics were compared with capacitors that instead used Poly-GaAs and Poly-Si. It is revealed that the memory window for the capacitor with the Poly-GaP floating film is comparable to the Poly-GaAs one, and still shows approximately twice the value of the Poly-Si. Based on these results, we conclude that flash memory with a Poly-GaP floating material can provide not only a wider memory window due to significant traps in III-V compounds, but also thermal immunity of the GaP material, which can be applied for 2D scaled flash memory.
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