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High-k absorber binary intensity mask using nickel for high numerical aperture extreme ultraviolet lithography
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 안진호 | - |
| dc.date.accessioned | 2021-08-02T08:56:28Z | - |
| dc.date.available | 2021-08-02T08:56:28Z | - |
| dc.date.issued | 2020-07-01 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/9488 | - |
| dc.title | High-k absorber binary intensity mask using nickel for high numerical aperture extreme ultraviolet lithography | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | NANO KOREA 2020 | - |
| dc.citation.conferencePlace | 일산 KINTEX | - |
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Collections - 서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers
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Related Researcher
- Ahn, Jinho
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)