A bow-free freestanding GaN wafer

Abstract

For applications as high-brightness light-emitting-diodes, a bow-free freestanding gallium nitride (GaN) wafer 2 inch in diameter and similar to 185 mu m in thickness was fabricated by process-designing pit and mirror GaN layers grownviahydride-vapor-phase epitaxy, laser lift-off, N-face polishing of the pit GaN layer, and three-step polishing of the mirror GaN layer using 3.0 mu m-, 0.5 mu m-, and 50 nm-diameter diamond abrasives and by inductively-coupled-plasma reactive-ion etching. The considerably large concave shape of the GaN wafer could be decreased by controlling the removal amount of the Ga-face mirror layer during the first step of the polishing process, which approached a bow-free shape or changed with further polishing; this well correlated with the residual stress of the polished GaN wafer.