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Showing results 1 to 2 of 2
beta-(Al0.17Ga0.(83))(2)O-3/Ga2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis
Atmaca, Gokhan;
Cha, Ho-Young
Article
Issue Date
2022
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.219, no.12
Publisher
WILEY-V C H VERLAG GMBH
Normally-off recessed gate <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> MOSHFETs with a modulation-doped heterostructure back-barrier
Atmaca, Gokhan;
Cha, Ho-Young
Article
Issue Date
2024
Citation
PHYSICA SCRIPTA, v.99, no.3
Publisher
IOP Publishing Ltd
1
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