beta-(Al0.17Ga0.(83))(2)O-3/Ga2O3 Delta-Doped Heterostructure MODFETs with an Ultrathin Spacer Layer and a Back-Barrier Layer: A Comprehensive Technology Computer-Aided Design Analysis
- Authors
- Atmaca, Gokhan; Cha, Ho-Young
- Issue Date
- 1-Jun-2022
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- delta-doped beta-Ga2O3 heterostructures; Ga2O3; MODFET; beta-2DEG
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.219, no.12
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 219
- Number
- 12
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/27805
- DOI
- 10.1002/pssa.202100732
- ISSN
- 1862-6300
- Abstract
- The output characteristics of beta-(Al0.17Ga0.(83))(2)O-3/Ga2O3-based heterostructure modulation-doped field-effect transistors (MODFETs) with an ultrathin spacer layer and a back-barrier layer are fitted with experimental measurements using a Silvaco ATLAS technology computer-aided design (TCAD) simulation environment, and the calibration of the physical model and material parameters is realized. The effects of spacer layer thickness, barrier layer thickness, Si-delta doping density, and insertion of a beta-Ga2O3 cap layer on the transfer and transconductance characteristics are examined. It is found that a beta-Ga2O3 cap layer on the top of the heterostructure can increase the sheet carrier density in the heterostructure. A breakdown analysis is also carried out to reveal the effects of several layers on the off-state characteristics. A range of channel layer thicknesses from 15 to 25 nm is found to be the optimum range to avoid a high off-state leakage current and earlier breakdown voltage.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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