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Effect of Gate Recess Damage to Transconductance and Mobility of AlGaN/GaN HEMTs
- Authors
- 차호영
- Issue Date
- 24-Feb-2015
- Publisher
- 한국반도체학술대회
- Citation
- 제23회 한국반도체학술대회 proceeding, v.1, no.1, pp.108 - 108
- Journal Title
- 제23회 한국반도체학술대회 proceeding
- Volume
- 1
- Number
- 1
- Start Page
- 108
- End Page
- 108
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)