Effect of Annealing Environment on the Performance of Sol-Gel-Processed ZrO2 RRAM
- Authors
- Ha, Seunghyun; Lee, Hyunjae; Lee, Won-Yong; Jang, Bongho; Kwon, Hyuk-Jun; Kim, Kwangeun; Jang, Jaewon
- Issue Date
- Sep-2019
- Publisher
- MDPI
- Keywords
- sol-gel; ZrO2; resistive random-access memory; annealing environment
- Citation
- ELECTRONICS, v.8, no.9
- Journal Title
- ELECTRONICS
- Volume
- 8
- Number
- 9
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/1163
- DOI
- 10.3390/electronics8090947
- ISSN
- 2079-9292
- Abstract
- We investigate the annealing environment effect on ZrO2-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO2 films exhibited larger crystallinity and grain size, denser film, and a relatively small quantity of oxygen vacancies compared with the films annealed in air and N-2. These led to a decrease in the leakage current and an increase in the resistance ratio of the high-resistance state (HRS)/low-resistance state (LRS) and successfully improved non-volatile memory properties, such as endurance and retention characteristics. The HRS and LRS values were found to last for 10(4) s without any significant degradation.
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Collections - College of Science and Technology > Department of Electronic and Electrical Engineering > 1. Journal Articles
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