A finite element model for stochastic set operation in phase-change memory
- Authors
- Shin, Minkyu; M.-K.; Lee; D.; Cha; P.-R.; Kwon, Yongwoo; Y.
- Issue Date
- 2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- Crystallization; Finite-element method; Modeling and simulation; Nucleation and growth; Phase-change memory
- Citation
- ICEIC 2019 - International Conference on Electronics, Information, and Communication
- Journal Title
- ICEIC 2019 - International Conference on Electronics, Information, and Communication
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/12787
- DOI
- 10.23919/ELINFOCOM.2019.8706407
- ISSN
- 0000-0000
- Abstract
- We successfully combined electrothermal and phase-field models in a finite element framework to establish a device model for set operation in phase-change memory. The electrothermal model calculates current density, Joule heating and heat transfer, and the resulting temperature profile from bias conditions while the phase-field model calculates thermal history dependent phase-change such as melt-quench and stochastic nucleation followed by growth. In this work, we will discuss capabilities of our model and its applications to set pulse design and intrinsic variability analysis. © 2019 Institute of Electronics and Information Engineers (IEIE).
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- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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