Spin hall effect-based nonvolatile flip flop for fine-grained power gating
- Authors
- Kwon, Konwoo; K.-W.
- Issue Date
- 2019
- Publisher
- Institute of Electronics Engineers of Korea
- Keywords
- Magnetic tunnel junction; Nonvolatile flip flop; Power gating; Spin hall effect
- Citation
- IEIE Transactions on Smart Processing and Computing, v.8, no.5, pp.415 - 422
- Journal Title
- IEIE Transactions on Smart Processing and Computing
- Volume
- 8
- Number
- 5
- Start Page
- 415
- End Page
- 422
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/12822
- DOI
- 10.5573/IEIESPC.2019.8.5.415
- ISSN
- 2287-5255
- Abstract
- This paper presents a nonvolatile flip flop (NVFF) for fine-grained power gating with data retention. The proposed NVFF exploits the spin Hall effect (SHE) for low-power and high-speed data backup operations. In order to evaluate the performance of the proposed NVFF, a simulation framework was used that consists of a SPICE circuit simulator and a Landau-Lifshitz-Gilbert solver. This work investigates the effect of process variation on the backup-and-restore operations, and shows that the proposed NVFF can achieve <5ns backup and <2ns restore operations even under process variations in the transistor and spin Hall device. Compared to the conventional spin transfer torque-based NVFF, the proposed NVFF improves the break-even time by more than three times because of the high spin injection efficiency of SHE and the simple single-phase backup mechanism. © 2019 The Institute of Electronics and Information Engineers.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/12822)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.