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Black phosphorus quantum dot-based field-effect transistors with ambipolar characteristics

Authors
SeoS.Park, ByoungnamB.Kim, YoungjunY.LeeH.U.KimH.LeeS.Y.KimY.WonJ.KimY.J.LeeJ.
Issue Date
2018
Citation
Applied Surface Science, v.448, pp.576 - 582
Journal Title
Applied Surface Science
Volume
448
Start Page
576
End Page
582
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13051
DOI
10.1016/j.apsusc.2018.04.158
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