Terahertz dielectric response of nonpolar ��-plane GaN Films
- Authors
- Jang; S.; Jung; S.; Park; J.; Kim; S.; Baik, Kwang-hyeon; K.H.
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS Transactions, v.77, no.6, pp.127 - 131
- Journal Title
- ECS Transactions
- Volume
- 77
- Number
- 6
- Start Page
- 127
- End Page
- 131
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13210
- DOI
- 10.1149/07706.0127ecst
- ISSN
- 1938-5862
- Abstract
- We report on the dielectric properties of non-polar a-plane (11-20) GaN (a-GaN) films in the terahertz (THz) frequency region, using THz time domain spectroscopy. We measured the transmitted THz time-domain waveforms by rotating the phi angle for 6 mu m-thick a-GaN films, which were lifted off from sapphire substrates. THz transmittance of a-GaN films clearly showed the angular dependence on azimuth angle, possibly due to the birefringence and optical phonon modes in a-GaN crystal. It is believed that the discrepancy in the refractive index results from the difference of the transverse-optical and the longitudinal optical phonon branches.
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