Microsecond crystallization of amorphous silicon films on glass substrates by joule heating
- Authors
- Hong; W.-E.; Ro, Jae-sang; J.-S.
- Issue Date
- 2016
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS Transactions, v.75, no.10, pp.27 - 35
- Journal Title
- ECS Transactions
- Volume
- 75
- Number
- 10
- Start Page
- 27
- End Page
- 35
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13463
- DOI
- 10.1149/07510.0027ecst
- ISSN
- 1938-5862
- Abstract
- Joule-heating-induced crystallization (JIC) of amorphous silicon (a-Si) films was conducted by applying an electric pulse to a conductive layer located beneath or above the films. Crystallization occurs across the whole substrate surface within few tens of microseconds. The phase-transformation phenomena during the JIC process were detected electrically and optically by the in-situ measurements of input voltage/current and normal reflectance at wavelength of 532 nm. We devised a method for the crystallization of a-Si films while preventing arc generation; this method consisted of pre-patterning an a-Si active layer into islands and then depositing a gate oxide and gate electrode. Electric pulsing was then applied to the gate electrode formed using a Mo layer. JIC-processed poly-Si thin-film transistors were fabricated successfully, and the proposed method was found to be compatible with the standard processing of coplanar top-gate poly-Si TFTs.
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