Contact Hole Shrinking of Directed Self-Assembly and Its Application Based on Simulation Approach
- Authors
- Kim, Sang-Kon
- Issue Date
- Oct-2015
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Lithography; Lithography Simulation; Shrinkage Process; Directed Self-Assembly; DSA; Block Copolymer; BCP
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.15, no.10, pp.8183 - 8186
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 15
- Number
- 10
- Start Page
- 8183
- End Page
- 8186
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/13633
- DOI
- 10.1166/jnn.2015.11288
- ISSN
- 1533-4880
- Abstract
- Directed self-assembly (DSA) of block copolymers (BCPs) has become an intense field of study as a complementary technique to conventional lithography for 1 x-nm semiconductor patterning. DSA contact hole (C/H) shrinking is a possible implemental technique in the DSA process. In this paper, a DSA C/H shrinking is fully modeled and simulated by using a self-consistent field theory (SCFT). Simulation results show good agreement with experiment results. In terms of this simulation, the potential of DSA C/H shrinking with thermal reflow is integrated into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. The optical proximity correction (OPC) of DSA C/H shrinking due to prepattern C/H and pitch can increase process window for DSA C/H shrinking.
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Collections - Department of General Studies > Department of General Studies > 1. Journal Articles
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