Wafer-Scale Growth of a MoS2 Monolayer via One Cycle of Atomic Layer Deposition: An Adsorbate Control Method
- Authors
- Kim, Dae Hyun; Park, Jae Chan; Park, Jeongwoo; Cho, Deok-Yong; Kim, Woo-Hee; Shong, Bonggeun; Ahn, Ji-Hoon; Park, Tae Joo
- Issue Date
- 8-Jun-2021
- Publisher
- AMER CHEMICAL SOC
- Citation
- CHEMISTRY OF MATERIALS, v.33, no.11, pp.4099 - 4105
- Journal Title
- CHEMISTRY OF MATERIALS
- Volume
- 33
- Number
- 11
- Start Page
- 4099
- End Page
- 4105
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/15508
- DOI
- 10.1021/acs.chemmater.1c00729
- ISSN
- 0897-4756
- Abstract
- Monolayer transition metal dichalcogenide corn pounds with two-dimensional (2D) layered structures may be used as next-generation active materials for electronic and optoelectronic devices. A reliable method for creating high-quality, waferscale material with well-controlled large-area growth is required for industrial applications. Two-dimensional material atomic layer deposition (ALD) can be used as an atomically flat monolayer film, but its deposition characteristics limit perfect monolayer formation. Herein, we propose a novel ALD chemical route for uniform monolayer MoS2 film deposition at the wafer scale. We first modulate the precursor injection step to precisely control one cycle's adsorbed precursor amount in a range exceeding a "typical" ALD reaction. Utilizing this process, we successfully created a complete monolayer MoS2 film in one ALD cycle. The film exhibited excellent uniformity at the wafer scale, and its luminescence quantum efficiency was approximately 9 times greater than that of film formed via conventional ALD. These results indicate this method can be employed to obtain complete single layers or to develop high-quality monolayer-scale 2D materials.
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Collections - College of Engineering > Chemical Engineering Major > 1. Journal Articles
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