Negative differential resistance in Si/GaAs tunnel junction formed by single crystalline nanomembrane transfer method
- Authors
- Kim, Kwangeun; Jang, Jaewon; Kim, Hyungtak
- Issue Date
- Jun-2021
- Publisher
- ELSEVIER
- Keywords
- Negative differential resistance; Si; GaAs; Tunnel junction diode; Nanomembrane transfer
- Citation
- RESULTS IN PHYSICS, v.25
- Journal Title
- RESULTS IN PHYSICS
- Volume
- 25
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/15511
- DOI
- 10.1016/j.rinp.2021.104279
- ISSN
- 2211-3797
- Abstract
- Negative differential resistance (NDR) region was established in Si/GaAs tunnel junction (TJ) formed by single crystalline nanomembrane (NM) transfer method. P + Si NM was transfer-printed onto n + GaAs epi-wafer, leading to the formation of Si/GaAs pn TJ diode comprised of crystalline semiconductors with no biaxial strain. Atomic-scale features at the Si/GaAs junction interface were analyzed by high-resolution transmission-electron-microscopy. The mechanism for NDR phenomenon in the electrical characteristics of Si/GaAs TJ diode was explained by the energy band diagram with a quantum mechanical band-to-band tunneling of carriers. The peak-to-valley-ratio value of TJ diode was 2.32. The results can be applicable to the fabrication of low-power circuits with a combination of lattice-mismatched crystalline semiconductors.
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Collections - College of Engineering > School of Electronic & Electrical Engineering > 1. Journal Articles
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