Effect of double-layered Al2O3/SiO2 dielectric materials on In-Ga-Zn-O (IGZO)-based amorphous transparent thin film transistors
- Authors
- Park, Chan-Rok; Hwang, Jin-Ha
- Issue Date
- Sep-2014
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Atomic layer; Deposition; Double-layered dielectric structure; In-Ga-Zn-O; Oxide thin film transistor
- Citation
- CERAMICS INTERNATIONAL, v.40, no.8, pp.12917 - 12922
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 40
- Number
- 8
- Start Page
- 12917
- End Page
- 12922
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16608
- DOI
- 10.1016/j.ceramint.2014.04.151
- ISSN
- 0272-8842
- Abstract
- A double-layered Al2O3/SiO2 dielectric structure was applied to In-Ga-Zn-O-based amorphous thin film transistors through the atomic layer deposition (ALD) of aluminum oxide combined with thermally grown SiO2 dielectrics. The presence of ALD-based Al2O3 increased the on/off current ratio, decreased the sub-threshold slope, and decreased the threshold voltage. However, the addition of Al2O3 increased the turn-on voltage and slightly and adversely decreased the mobility. The device features appear to be associated with the presence of high-k Al2O3, which results in newly formed interfaces, oxide integrity, and high charge storage capabilities. The performance of the optimized thin film transistor is shown with the 50 nm Al2O3/50 nm SiO2 dielectric structure, which has a threshold voltage of 8.67 V, a turn-on voltage of 5.09 V, an on/off current ratio of 5.12 x 10(9) and a sub-threshold slope of 0.23 V/decade. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
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