Electrochemical Process for 3D TSV without CMP and Lithographic Processes
- Authors
- Koo, Ja-Kyung; Lee, Jae-Ho
- Issue Date
- Mar-2014
- Publisher
- KOREAN INST METALS MATERIALS
- Keywords
- TSV; copper via filling; electropolishing; electroless plating; Cu/Sn bump
- Citation
- ELECTRONIC MATERIALS LETTERS, v.10, no.2, pp.485 - 490
- Journal Title
- ELECTRONIC MATERIALS LETTERS
- Volume
- 10
- Number
- 2
- Start Page
- 485
- End Page
- 490
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16742
- DOI
- 10.1007/s13391-014-8007-5
- ISSN
- 1738-8090
- Abstract
- A serial electrochemical processes consisting of copper via filling, electropolishing, electroless copper plating and electroless tin plating were investigated for the 3D through silicon via (TSV) SiP application. Defect-free copper via filling was achieved by controlling current modes and additives. After via filling, electropolishing was performed to planarize over-plated copper. Electropolishing within the potential of mass-transfer region and with the assistance of additives, fine polished surface without thickness disparity was achieved. For bump formation process, electroless copper and tin plating which is a self-aligned process was applied. Consequently, Cu/Sn bump on via patterned wafer was obtain without using the conventional CMP and lithographic processes.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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