Electrochemical Process for 3D TSV without CMP and Lithographic Processes

Abstract

A serial electrochemical processes consisting of copper via filling, electropolishing, electroless copper plating and electroless tin plating were investigated for the 3D through silicon via (TSV) SiP application. Defect-free copper via filling was achieved by controlling current modes and additives. After via filling, electropolishing was performed to planarize over-plated copper. Electropolishing within the potential of mass-transfer region and with the assistance of additives, fine polished surface without thickness disparity was achieved. For bump formation process, electroless copper and tin plating which is a self-aligned process was applied. Consequently, Cu/Sn bump on via patterned wafer was obtain without using the conventional CMP and lithographic processes.