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Improvement of V-th Instability in Normally-Off GaN MIS-HEMTs Employing PEALD-SiNx as an Interfacial Layer
- Issue Date
- Jan-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- GaN; gate leakage current; metal insulator semiconductor high electron mobility transistors (MIS-HEMTs); normally-off; plasma enhanced atomic layer deposition (PEALD); silicon nitride; threshold voltage instability
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.35, no.1, pp.30 - 32
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 35
- Number
- 1
- Start Page
- 30
- End Page
- 32
- ISSN
- 0741-3106
- Abstract
- In this letter, reduction of threshold voltage instability in gate recessed normally-off GaN metal insulator semiconductor high electron mobility transistors with SiNx gate insulator was investigated. A plasma enhanced atomic layer deposition technique was successfully employed for very thin SiNx (5 nm) as an interfacial layer. The hysteresis and drift of threshold voltage in transfer curve and the forward biased gate leakage current were effectively reduced.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)