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Metal seed layer sputtering on high aspect ratio through-silicon-vias for copper filling electroplating

Authors
Song, Young SikYim, TaiHongPark, Soo-KeunLee, Jae-HoKim, Jongryoul
Issue Date
30-Dec-2013
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
High aspect ratio via; Seed layer; Copper filling electroplating; Sputtering
Citation
ELECTROCHIMICA ACTA, v.114, pp.832 - 837
Journal Title
ELECTROCHIMICA ACTA
Volume
114
Start Page
832
End Page
837
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/16975
DOI
10.1016/j.electacta.2013.09.096
ISSN
0013-4686
Abstract
In this experiment, metal (Mo/Cu) seed layers with an aspect ratio of 10:1 were deposited by a conventional sputtering method and then copper filling by electroplating was followed in order to fabricate through silicon vias with a high aspect ratio. With increasing the aspect ratio, it is critical to carefully control the reduction of via's hole size before filling the bottom seed layer. By changing sputtering time, pressure, and power, changes in the thickness of the metal seed layers were investigated. It was found that optimizing the sputtering conditions improved the quality of the seed layer and retarded the speed of the hole size reduction. As a result, a metal seed layer with a via's opening percentage of about 62% and a bottom seed layer thickness of 46.7nm was fabricated by conventional sputtering. Using this seed layer, Cu filling was successfully carried out by electroplating. (C) 2013 Elsevier Ltd. All rights reserved.
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