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The Relationship between the Pi-coefficient and the Temperature for the (111) Silicon Surface
- Authors
- Cho, Chun-Hyung
- Issue Date
- Nov-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Pi-coefficients versus temperature; Stress sensor; (111) silicon; TCR measurements
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.10, pp.2029 - 2033
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 63
- Number
- 10
- Start Page
- 2029
- End Page
- 2033
- ISSN
- 0374-4884
- Abstract
- In this work, we performed an extensive experimental study on temperature dependence of the piezoresistive behavior of silicon. For the precise measurement of stress, we derived the expressions for the relationship between the pi-coefficients versus temperature. Also, the relationship was observed to be in good agreement with the calibration results over the temperature range -133 to 100 degrees C for test chips fabricated on the (111) silicon surface.
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Related Researcher
- Cho, Chun Hyung
- Science & Technology (Department of Electronic & Electrical Convergence Engineering)