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Semi-Transparent a-IGZO Thin-Film Transistors with Polymeric Gate Dielectric
- Authors
- Hyung, Gun Woo; Wang, Jian-Xun; Li, Zhao-Hui; Koo, Ja-Ryong; Kwon, Sang Jik; Cho, Eou-Sik; Kim, Young Kwan
- Issue Date
- Jun-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Amorphous InGaZnO Transistor; Polymeric Gate Dielectric Layer; Flexible Substrate; Semi-Transparent
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.6, pp.4052 - 4055
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 6
- Start Page
- 4052
- End Page
- 4055
- ISSN
- 1533-4880
- Abstract
- We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with cross-linked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 Omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum similar to 5.8 cm(2)/Vs) and on/off current ratios of similar to 10(6).
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Related Researcher
- Kim, Young Kwan
- Engineering (Applied Science)