Fabrication and Electrical Properties of Low Temperature-Processed Thin-Film-Transistors with Chemical-Bath Deposited ZnO Layer
- Authors
- Ahn, Joo-Seob; Kwon, Ji-Hye; Yang, Heesun
- Issue Date
- Jun-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- ZnO Film; Chemical Bath Deposition; Thin-Film-Transistor; Baking Temperature
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.6, pp.3978 - 3982
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 6
- Start Page
- 3978
- End Page
- 3982
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17119
- DOI
- 10.1166/jnn.2013.7025
- ISSN
- 1533-4880
- Abstract
- ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of similar to 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiNx/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm(2)/V.s.
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Collections - Graduate School > Materials Science and Engineering > 1. Journal Articles
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