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Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Jae-Gil | - |
| dc.contributor.author | Park, Bong-Ryeol | - |
| dc.contributor.author | Cho, Chun-Hyung | - |
| dc.contributor.author | Seo, Kwang-Seok | - |
| dc.contributor.author | Cha, Ho-Young | - |
| dc.date.accessioned | 2021-11-11T04:42:21Z | - |
| dc.date.available | 2021-11-11T04:42:21Z | - |
| dc.date.created | 2021-11-10 | - |
| dc.date.issued | 2013-02 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17185 | - |
| dc.description.abstract | A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 mu m exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.title | Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Cho, Chun-Hyung | - |
| dc.contributor.affiliatedAuthor | Cha, Ho-Young | - |
| dc.identifier.doi | 10.1109/LED.2012.2235403 | - |
| dc.identifier.scopusid | 2-s2.0-84873061003 | - |
| dc.identifier.wosid | 000314173200022 | - |
| dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp.214 - 216 | - |
| dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
| dc.citation.volume | 34 | - |
| dc.citation.number | 2 | - |
| dc.citation.startPage | 214 | - |
| dc.citation.endPage | 216 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.subject.keywordAuthor | AlGaN/GaN-on-Si | - |
| dc.subject.keywordAuthor | breakdown voltage | - |
| dc.subject.keywordAuthor | gated ohmic anode | - |
| dc.subject.keywordAuthor | rectifier | - |
| dc.subject.keywordAuthor | turn-on voltage | - |
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Related Researcher
- Cho, Chun Hyung
- Science & Technology (Department of Electronic & Electrical Convergence Engineering)