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Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode
- Issue Date
- Feb-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- AlGaN/GaN-on-Si; breakdown voltage; gated ohmic anode; rectifier; turn-on voltage
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp.214 - 216
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 2
- Start Page
- 214
- End Page
- 216
- ISSN
- 0741-3106
- Abstract
- A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 mu m exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.
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Related Researcher
- Cha, Ho Young
- Engineering (Electronic & Electrical Engineering)