Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO
DC Field | Value | Language |
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dc.contributor.author | Kim, H. | - |
dc.contributor.author | Baik, K.H. | - |
dc.contributor.author | Jang, S. | - |
dc.date.accessioned | 2021-11-11T04:43:04Z | - |
dc.date.available | 2021-11-11T04:43:04Z | - |
dc.date.created | 2021-11-10 | - |
dc.date.issued | 2013 | - |
dc.identifier.issn | 1938-5862 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17239 | - |
dc.description.abstract | High quality a-plane (11-20) ZnO film has been successfully grown on a-plane GaN template by facile, low-cost, seed-layer-free hydrothermal solution method at low temperature. The surface of ZnO film consists of m-plane (1-100), which has the slowest growth rate and stable surface energy. Crystalline structure and morphology of a-plane ZnO were analyzed with XRD, TEM, SEM, and AFM. Furthermore, nonpolar a-plane n-ZnO/p-GaN light emitting diodes which showed sharp near-UV emissions at the low voltage of 3.5 V were fabricated. © The Electrochemical Society. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Electrochemical Society Inc. | - |
dc.subject | Gallium nitride | - |
dc.subject | Metallic films | - |
dc.subject | Zinc oxide | - |
dc.subject | A-plane GaN | - |
dc.subject | Crystalline structure | - |
dc.subject | High quality | - |
dc.subject | Hydrothermal solution | - |
dc.subject | Hydrothermally | - |
dc.subject | Low temperatures | - |
dc.subject | Low voltages | - |
dc.subject | Stable surfaces | - |
dc.subject | Light emitting diodes | - |
dc.title | Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Baik, K.H. | - |
dc.identifier.doi | 10.1149/05808.0011ecst | - |
dc.identifier.scopusid | 2-s2.0-84904875050 | - |
dc.identifier.wosid | 000354472700002 | - |
dc.identifier.bibliographicCitation | ECS Transactions, v.58, no.8, pp.11 - 15 | - |
dc.relation.isPartOf | ECS Transactions | - |
dc.citation.title | ECS Transactions | - |
dc.citation.volume | 58 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 11 | - |
dc.citation.endPage | 15 | - |
dc.type.rims | ART | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Optics | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Optics | - |
dc.subject.keywordPlus | Gallium nitride | - |
dc.subject.keywordPlus | Metallic films | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | A-plane GaN | - |
dc.subject.keywordPlus | Crystalline structure | - |
dc.subject.keywordPlus | High quality | - |
dc.subject.keywordPlus | Hydrothermal solution | - |
dc.subject.keywordPlus | Hydrothermally | - |
dc.subject.keywordPlus | Low temperatures | - |
dc.subject.keywordPlus | Low voltages | - |
dc.subject.keywordPlus | Stable surfaces | - |
dc.subject.keywordPlus | Light emitting diodes | - |
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