Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO
- Authors
- Kim, H.; Baik, K.H.; Jang, S.
- Issue Date
- 2013
- Publisher
- Electrochemical Society Inc.
- Citation
- ECS Transactions, v.58, no.8, pp.11 - 15
- Journal Title
- ECS Transactions
- Volume
- 58
- Number
- 8
- Start Page
- 11
- End Page
- 15
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17239
- DOI
- 10.1149/05808.0011ecst
- ISSN
- 1938-5862
- Abstract
- High quality a-plane (11-20) ZnO film has been successfully grown on a-plane GaN template by facile, low-cost, seed-layer-free hydrothermal solution method at low temperature. The surface of ZnO film consists of m-plane (1-100), which has the slowest growth rate and stable surface energy. Crystalline structure and morphology of a-plane ZnO were analyzed with XRD, TEM, SEM, and AFM. Furthermore, nonpolar a-plane n-ZnO/p-GaN light emitting diodes which showed sharp near-UV emissions at the low voltage of 3.5 V were fabricated. © The Electrochemical Society.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/17239)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.