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Nonpolar light-emitting diodes using hydrothermally grown a-plane ZnO
- Authors
- Kim, H.; Baik, K.H.; Jang, S.
- Issue Date
- 2013
- Publisher
- Electrochemical Society Inc.
- Citation
- ECS Transactions, v.58, no.8, pp.11 - 15
- Journal Title
- ECS Transactions
- Volume
- 58
- Number
- 8
- Start Page
- 11
- End Page
- 15
- ISSN
- 1938-5862
- Abstract
- High quality a-plane (11-20) ZnO film has been successfully grown on a-plane GaN template by facile, low-cost, seed-layer-free hydrothermal solution method at low temperature. The surface of ZnO film consists of m-plane (1-100), which has the slowest growth rate and stable surface energy. Crystalline structure and morphology of a-plane ZnO were analyzed with XRD, TEM, SEM, and AFM. Furthermore, nonpolar a-plane n-ZnO/p-GaN light emitting diodes which showed sharp near-UV emissions at the low voltage of 3.5 V were fabricated. © The Electrochemical Society.
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Related Researcher
- Baik, Kwang Hyeon
- Science & Technology (Department of Nanomaterials Engineering)