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Highly-sensitive Hydrostatic Semiconductor Pressure Sensors

Authors
Cho, Chun-HyungCha, Ho-YoungSung, Hyuk-Kee
Issue Date
Apr-2019
Publisher
IEEK PUBLICATION CENTER
Keywords
Semiconductor pressure-sensor; hydrostatic pressure; pressure-sensitivity
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.19, no.2, pp.158 - 164
Journal Title
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Volume
19
Number
2
Start Page
158
End Page
164
URI
https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/1814
DOI
10.5573/JSTS.2019.19.2.158
ISSN
1598-1657
Abstract
For the hydrostatic pressure calculation, we developed a semiconductor pressure sensor and analyzed the hydrostatic pressure sensitivities of silicon. In previous works, it exhibited a very low sensitivity. However, in this work, the sensitivity was improved drastically by combining p- type (in the n-substrate) and n-type (in the p-well) resistor sensors with measuring the mid-point voltage of the combined sensor pair. Also, we could increase the sensitivity of hydrostatic pressure by controlling the voltage applied to the combined sensor pair. As an example, for the applied voltage of 20 V to the pair (compared to the previous works), the sensitivity was increased by up to 130 %.
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