Effects of the Thickness of N,N-diphenyl-N,N-di(m-tolyl)-benzidine on the Electro-Optical Characteristics of Organic Light-Emitting Diodes

Abstract

We examined the electro-optical characteristics of organic light emitting diodes according to the N,N-diphenyl-N,N-di(m-tolyl)-benzidine (TPD) thicknesses. The thicknesses of TPD were varied from 5 nm to 50 nm. The current density of the device with a TPD thickness of 5 nm was 8.94 times higher than that with a thickness of 50 nm at a driving voltage of 10 V. According to the conduction-current characteristics of conductors, the current densities improved with a decreasing TPD thickness. Different from the current density-voltage characteristics, the current efficiency-current density characteristics showed an improved efficiency with a 50 nm TPD thickness. The current efficiencies of a device with a 5 nm TPD thickness at a driving voltage of 10 V was 0.148 and at a 50 nm TPD thickness 0.993 cd/A, which was 6.7 times higher than the 5 nm TPD thickness. These results indicated that hole transport in Organic Light-Emitting Diode (OLED) devices were more efficient with thin 5 nm TPD than with thick 50 nm TPD, while electron transport was more efficient with thick 50 nm TPD, which caused conflicting results in the current efficiency-current density and current density-voltage characteristics according to TPD thicknesses.