Activation of ion-implanted polycrystalline silicon thin films prepared on glass substrates
- Authors
- So, Byoung-Soo; Bae, Seung-Muk; You, Yil-Hwan; Kim, Young-Hwan; Hwang, Jin-Ha
- Issue Date
- Oct-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Electronic materials; Thin films; Raman spectroscopy; Electron microscopy; Electrical properties
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.10, pp.3048 - 3051
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 10
- Start Page
- 3048
- End Page
- 3051
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/18896
- DOI
- 10.1016/j.materresbull.2012.04.130
- ISSN
- 0025-5408
- Abstract
- Phosphorous-implanted polycrystalline Si thin films were subjected to thermal annealing between 300 degrees C and 650 degrees C. The thermal activation was monitored electrically and structurally using Hall measurements, Raman spectroscopy, UV-visible spectrophotometry, and transmission electron microscopy. Charge transport information was correlated to the corresponding structural evolution in thermal activation. Phosphorous-implanted activation is divided into short-range ordering at low temperatures and long-range ordering at high temperatures, with the boundary between low and high temperatures set at 425 degrees C. Short-range ordering allows for significant increase in electronic concentration through substitution of P for Si. Higher temperatures are attributed to long-range ordering, thereby increasing electronic mobility. (C) 2012 Elsevier Ltd. All rights reserved.
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- Appears in
Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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