Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification
- Authors
- Hong, Won-Eui; Kim, Deok Hoi; Kim, Chi Woo; Ro, Jae-Sang
- Issue Date
- 31-Oct-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Doping; Electrical activation; Polycrystalline silicon; Thin-film-transistor
- Citation
- THIN SOLID FILMS, v.520, no.1, pp.616 - 622
- Journal Title
- THIN SOLID FILMS
- Volume
- 520
- Number
- 1
- Start Page
- 616
- End Page
- 622
- URI
- https://scholarworks.bwise.kr/hongik/handle/2020.sw.hongik/19802
- DOI
- 10.1016/j.tsf.2011.08.018
- ISSN
- 0040-6090
- Abstract
- We have investigated the electrical activation in boron doped poly-Si using Hall measurement, 4-point probe, and secondary ion mass spectroscopy. Through doping was conducted using a mass-separated ion implanter with acceleration energies from 20 to 35 keV at doses ranging from 1 x 10(15)/cm(2) to 4 x 10(15)/cm(2), followed by isothermal rapid-thermal-annealing at temperatures ranging from 550 to 650 degrees C. The substrates used were poly-Si, produced by two-shot sequential lateral solidification. Reverse annealing, in which a continuous loss of charge carriers occurs, was observed in boron doped poly-Si. We found that implantation conditions play a critical role on dopant activation as well as annealing conditions. We observed that a certain implantation condition does exist where the sheet resistance is not changed upon activation annealing. Damage recovery encountered in activation annealing seems to be closely related to a reverse-annealing phenomenon. We assume that the defect-concentration profile would be more important to activation behavior of poly-Si than integrated defect-density accumulated in the silicon layer. (C) 2011 Elsevier B.V. All rights reserved.
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Collections - College of Engineering > Materials Science and Engineering Major > 1. Journal Articles
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