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Arc-instability generated during the Joule heating induced crystallization of amorphous silicon films
- Authors
- Hong, Won-Eui; Ro, Jae-Sang
- Issue Date
- 31-Jan-2011
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Joule heating; Crystallization; Low temperature polycrystalline silicon; Active matrix organic light emitting diode; Thin film transistors
- Citation
- THIN SOLID FILMS, v.519, no.7, pp.2371 - 2375
- Journal Title
- THIN SOLID FILMS
- Volume
- 519
- Number
- 7
- Start Page
- 2371
- End Page
- 2375
- ISSN
- 0040-6090
- Abstract
- Joule heating induced crystallization (JIC) was accomplished by applying an electric field to a conductive layer located beneath the amorphous silicon film. This study found that an intense arc is generated at the interface between the silicon and the electrode. The artificial modification of a JIC-sample structure led us to the finding that arc generation is caused by the dielectric breakdown of a SiO2 layer that is sandwiched between the transformed polycrystalline silicon and a conductive layer at high temperatures during Joule heating. (c) 2010 Elsevier B.V. All rights reserved.
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